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| savantic semiconductor product specification silicon npn power transistors BUX84F bux85f d escription with to-220fa package high voltage ,high speed applications converters inverters switching regulators motor controls systems pinning pin description 1 base 2 collector 3 emitter absolut maximum ratings (ta=25 ) symbol parameter conditions value unit BUX84F 800 v cbo collector-base voltage bux85f open emitter 1000 v BUX84F 400 v ceo collector-emitter voltage bux85f open base 450 v v ebo emitter-base voltage open collector 10 v i c collector current 2 a i cm collector current-peak 3 a i b base current 0.75 a i bm base current-peak 1 a p tot total power dissipation t c =25 18 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-a thermal resistance junction to ambient 55 k/w fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUX84F bux85f characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit BUX84F 400 v ceo(sus) collector-emitter sustaining voltage bux85f i c =100ma ; i b =0;l=25mh 450 v v cesat-1 collector-emitter saturation voltage i c =0.3a ;i b =0.03a 0.8 v v cesat-2 collector-emitter saturation voltage i c =1a ;i b =0.2a 1 v v besat base-emitter saturation voltage i c =1a ;i b =0.2a 1.1 v BUX84F v ces =800v; v be =0 t j =125 0.2 1.5 i ces collector cut-off current bux85f v ces =1000v; v be =0 t j =125 0.2 1.5 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =0.1a ; v ce =5v 20 100 h fe-2 dc current gain i c =0.5a ; v ce =5v 15 f t transition frequency i c =0.2a ;v ce =10v;f=1.0mhz 20 mhz switching times t on turn-on time 0.2 0.5 s t s storage time 2 3.5 s t f fall time i c =1a ;v cc =250v i b1 =0.2a;i b2 =-0.4a 0.4 s savantic semiconductor product specification 3 silicon npn power transistors BUX84F bux85f package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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